Úvod
High-PowerTransistorsaregerallyCalledPowerDevices, které BelongtothefieldOfpowerElectronicstechnology (PowerEctronicStEchnology).ITSESSENSESSECTOEFFECTIVALYCORTORESONEAMableOperationOperationFowerEctronicDevices a PROVIDEHIGHE-PowerOutputPortHeloadthroughPowerElectronicDevices.
Obecně řečeno, PowerDevicesUsuallyWorkUnderHighvolTageadhighCurrentConditions, agenerallyhavethethethecharacteristicsOfHighwithSandvoltage, velký zpracování a.TherereCiredIfferencesInPowerDevices.
Klasifikace
PowerDevicesawhoLecAnBedIDideDinTounControllableDevices, polo-kontrolovanou anamiltivně kontrolovanou položku.
1.Nekontrolovatelná zařízení
GuideOnandoffCannotbeControlledByControlSignals, itisCompletelyDeterMedTheCorurrentAntAlTageConditionSitBearSentheCircuit, který jezdil.Včetně PowerDiodes.
2.Semi-ControllableDevice
ItreferstotheControlSignCanbeusedToControlitStUrn-on, butcannotcontrolitStrurn-off, it-offcanonlybewithstooninthemainCircuittHevolToltCurrentConditionSaredSerinbyNaturalsHutdowndownshowl.Včetně thethyristor (SCR) athebidirectionalthyristor (Triac) odvozeného od.
3.Plně kontrolovatelná hodnota
referstodevicesthatcanbeturnedonandoffusingcontrolsignals,includingpowertransistors(GTR),powerfieldeffecttransistors(powerMOSFET),Turnoffthyristor(GTO),insulatedgatebipolartransistor(IGBT),MOScontrolledthyristor(MCT),staticinductiontransistor(SIT),staticinductionthyristor(SITH)andintegratedgatecommutatedthyristor(IGCT),etc.
Plně kontrolovatelná hodnotacanalsobedividedintotwocategories:currentcontroltypeandvoltagecontroltype.
TheCurrentControltypeincludes: GTR (Powertriode), SCR (ControllableThyristor), Triac (Controllablebidirectionalthyristor), GTO (Turnofftransistor) andsoon.
TheVoltageControltypeincludes: PowerMosfet, IGBT, McTandsit.
Porovnání výkonu
1.SelectionPrinciple
Použitelnost (whethertechnicalrequirementsAremet), ekonomika (nákladová efektivita);
2.OPERACEFREQUENCYCOMPARISON
SIT>MOSFET(3-10MHz)>IGBT(50kHz)>SITH>GTR(30kHz)>MCT>GTO;
3.PowerCapacityCopaparison
GTO(6000V/6000A)>SITH>MCT>IGBT(2500V/1000A)>GTR(1800V/400A)>SIT>powerMOSFET(1000V/100A);
p>4.Srovnávací staterezistence
PowerMOSFET>SIT>SITH>GTO>IGBT>GTR>MCT;
5.SrovnáváníControldoldifficulty
Voltagecontroltypecontroliseasiertocontrolthancurrentcontroltype,buttheSITisanormally-ondevice,andthecontrolismoredifficultthanpowerMOSFETandIGBT.
DesignPrinciplesOfBasedRiveCircuit
GtrBasedRiveCircuituiAndPerMancedlyAftecttHeworkingConditionSofgtr, SotheFollingtWopointssHouldBeconSideredwHendeSigningTheasedRiveCircuit: OptimizedDrivingModeandautomaticfastProtection.
Theso-calledoptimaldriveistoControltheswitchingProcesofthegtrwiththeidealbasedriveCurrentWoveforminOrdertoincreashethesSwitchingSpeeDandreducethesSwitchingLoss.IDEALBasedriveCurrentWaveform.INorderTospeeDupTheturn-Ontimeandeuceturn-onloss, TheforwardbaseCurrentNonlyRequireSleadedEdgedEdgedEdgeinitialTurn-onperiod, bulalorequiresacenceperoFoverdRiveCurrentib1.The BADESRIVECURRENTIB2THETURN-ONPHASESHEWERTHEPHEGTHEGTRJenthequasi-Saturatedstate, soastoshortenthestoragetimets.Igeneral, TheValueoFoverdriveCurrentib1IsElectedTobeabout3timesthevalueofquasi-nasycené založené na základě nasazených pramenů.5s, anditsWidthsHouldbeControlLedataBout2s.Whenthegtristurnedeoff, tam nabasedriveCurrentib3sHowlSelarger, iNorderTospeeDupTheCarrieExtractionSpeeDenThebasearea, krátkodobý odleh.IntracticalAplikace, častochooseib3 = ib1orbigger.ThisindofBasedriveWaveFormisgenerallyRealizedByanaCcelerationCircuitanAbakerClampCircuit.
Nepřijevo, thegtrdriveCircuitsHouselsohaveasef-ProtectionFunction, sothatthebasedriveSignalcanbequicklyandautomatickyCutoffinafaultStaetoiddamageTothegtr..ThereMeremanypesofProtectionCircuits, který sebralEdEctedAdCopPoPraitivelscordingTotheDerentRequirementsOfDevicesand acircuits.InordertoimprovetHesWitchingsspeed, Ananti-saturaceprotectionCircuitcanbeused; toensurethattheswitchingCircuititItsHaSlowPowerConSonsent, adesaturationProtectionCircuitcanbeused; topreventUndernUndernthebasefromcausingtheDeviceTeviceTeviceTeviceTeviceTeviceoverloaged, apowersUpPotageMeuseused..Nepřijevo, therereapulseWidtHlitingCircuits aprotectionCirccuitsfovervolTage, overcrurrent, andoverheatingtopreventdamagetothegtri.
ThereMeranyformSofBasedriveCircuit, atherearetreeobvioustrendsInthesummary:
1.INorderToimprovetHingingSpeed, anti-saturationbakerclampcircuisudeSuseshebasicCircuit;
2.NepřetržitěimproveandexpandtheautomaticPotectionFunction;
3.NepřetržitěimproveandPerfectterMofTurn-onlandTurn-offspeed.
Aplikace
Usedtocontrolpoweroutput,high-frequencyhigh-powertransistorapplicationsinthescanningcircuitofelectronicequipment,suchascolorTV,monitors,oscilloscopes,horizontalscanningcircuitsoflargegamemachines,Videoamplifiercircuit,poweramplifieroftransmitter,suchasradiofrequencyoutputcircuitofwalkie-talkie,mobilephone,high-frequencyoscillationcircuitandhigh-speedelectronicswitchcircuit,etc.
Thehigh-powertubemustbeinstalledonametalradiatorbecauseitgeneratesalargeamountofheat,andtheareaofthemetalradiatormustbelargeenough,otherwisethetechnicalperformancespecifiedinthetechnicaldocumentationwillnotbeachieved.