Chipbasics
1.Theroleofthechip:
ThechipisthemainrawmaterialoftheLED,andtheLEDmainlydependsonthechiptoemitlight.
2.Thecompositionofthewafer.
Mainlyincludearsenic(AS),aluminum(AL),gallium(Ga),indium(IN),phosphorus(P),nitrogen(N),strontium(Sr)Severaloftheseelementsarecomposed.
Three.Classificationofchips
1.Accordingtoluminousbrightness:
A.Generalbrightness:R,H,G,Y,E,etc.
B.Highbrightness:VG,VY,SR,etc.
C.Ultrahighbrightness:UG,UY,UR,UYS,URF,UE,etc.
D.Invisiblelight(infrared):IR,SIR,VIR,HIR
E.Infraredreceivingtube:PT
F.Photoelectrictube:PD
2.Accordingtotheconstituentelements:
A.Binarywafers(phosphorus,gallium):H,G,etc.
B.Ternarywafers(Phosphorus,gallium,arsenic):SR,HR,UR,etc.
C.Quaternarywafers(phosphorus,aluminum,gallium,indium):SRF,HRF,URF,VY,HY,UY,UYS,UE,HE,UG,etc.
Four.Chipcharacteristicstable(seethefollowingtablefordetails)
Wavelengthoflight-emittingcolorelementsofchipmodel(nm)Wavelengthoflight-emittingcolorelementsofchipmodel(nm)
SBIbluelnGaN/sic430HYsuperbrightyellowAlGalnP595
SBKbrighterbluelnGaN/sic468SEbrightorangeGaAsP/GaP610
DBKbrighterblueGaunN/Gan470HEsuperbrightorangeAlGalnP620
SGLcyanlnGaN/sic502UEbrightestorangeAlGalnP620
DGLbrightercyanLnGaN/GaN505URFbrightestredAlGalnP630
DGMbrightercyanlnGaN523EorangeGaAsP/GaP635
PGpuregreenGaP555RredGAaAsP655
SGStandardGreenGaP560SRBrighterRedGaA/AS660
GGreenGaP565HRSuperBrightRedGaAlAs660
VGBrighterGreenGaP565URBrightestRedGaAlAs660
UGmostBrightgreenAIGalnP574HhighredGaP697
YyellowGaAsP/GaP585HIRinfraredGaAlAs850
VYbrightyellowGaAsP/GaP585SIRinfraredGaAlAs880
UYSBrightestYellowAlGalnP587VIRInfraredGaAlAs940
UYBrightestYellowAlGalnP595IRInfraredGaAs940
V.Precautionsandothers
1.ChipManufacturerName:A.Guanglei(ED)B.Guolian(FPD)C.Dingyuan(TK)D.Huashang(AOC)
E.Hanguang(HL)F.AXTG.Guang
2.Payattentiontoelectrostaticprotectionduringtheproductionanduseofthechip.
VI.Chipstructure
Singlechipstructureanddualchipstructureareshowninthefigure.
Seven.Waferparameters
Appearanceofthewafer
Theshapeofthewaferissquareorrectangular,withsingleordoubleelectrodesontheuppersurface,
Mostoftheredandyellowwafersaresingle-electrodewafers,andtheuppersurfacehaspositiveornegativeelectrodes.
Mostblue/greenwafersaredoubleelectrodes,andgenerallyroundelectrodesarepositiveelectrodes.PleaserefertothewaferforspecificelectrodeconditionsSpecification.
Chipsize
Chipsaredividedbysize,themorecommonlyusedonesarethefollowingspecifications
(1mil=25.4µm)
Smallsize
7*9mil
9*11mil
12*12mil
10*18mil
14*14mil
15*15mil
10*23min
Largesize
24*24mil
28*28mil
40*40mil
45*45mil
60*60mil
8.Mainphotoelectricparametersofthechip
9.Waferevaluation
1.Evaluationprocess:
Incominginspection==>Arrangetrialproduction==>Bondingtest==>Bondingwiretest==>Agingexperiment==>Badanalysis==>OK/NG
2.Theinspectionitemsinclude:
2.1.Whetherthereisaspecificationfortheincomingdata(thereisnospecificationItisnotrecommendedtoexperimentblindly);
2.2.Doestheincomingchipparameters(brightness,voltage,wavelength,etc.)meetthespecifications?
Doestheappearance(electrodeposition)matchthespecifications?Thesameinthebook;
2.3.Sizemeasurement:Needtouseanaccuratehigh-powermicroscopetomeasure,whethertheactualsizemeetstherequirements;includingthelength,width,height,electrodesize,etc.
2.4.Electricaltesting:whethertheactualtestsofVF,IV,WL,IR,polarity,etc.meettherequirements.
Therearemanymanufacturersthatdonothaveconditionaltestsforthisitem.Itisrecommendedtomakeitintoaproducttestduringthetrialproductionprocess.
Producttest(butthepolarityisbesttobeconfirmedfirst);
3.Trialproduction
AfterthevisualinspectionisOK,starttheorderingexperimentandwhetherotherperformancesaresuitable
Bulkproduction,preparerelevantmaterialsandtrialproductionmaterialswhenordering
4.Bondingevaluationitems:
a.PRrecognitionability
b.airpressure
c.thimbleheight
p>d.Nozzlesize
e.Weldingheadpressure
f.Stickinessofchipfilm
g.Howabouttheproductivity,
p>h.Thrust(post-pushphenomenon)
Ifthereisanyproblem,itmustberecorded.
Weldingwireevaluationitems:
a.Weldingwirepressure
b.Power
c.Time
d.Bondingwirehotplatetemperature
e.PRrecognitionability
f.Archeight
g.Goldenballsize
h.Productioncapacity
i.Pullforce(breakpointposition)
Ifthereisanyproblem,itmustberecorded.
Agingtest
a.Electricaltest(includingESD);
b.Accordingtothereliabilityteststandard,takematerialsandpreparetodothefollowingexperiments:
p>Beforetheexperiment,theproductneedstobenumberedtotesttheperformanceofVF/IR/IV/WL,andtheproductmustcorrespondtothedata),
Experiment1:Lightupandsaveatroomtemperature(conditionTa=25±5℃,RH=55±20%RH,
20mApoweronfor1000hrs)
Experiment2:Hightemperatureandhighhumiditylighting(conditionsTa=85+5,-3℃,RH=85%+5,-10%,
20mApoweronfor1000hrs)
Experimentthree:thermalshock[conditionTa=85℃(30minutes)～Ta=25℃(30minutes)
～Ta=-40℃(30minutes)～Ta=85℃(30minutes)]
Otherexperimentscanbeselectedaccordingtoyourneeds;
Testevery100/168hoursduringtheexperiment;
Alldefectiveproductsmustbeanalyzed.