Materialsformanufacturingsemiconductorchips
Inordertomeetthedemandformassproduction,theelectricalpropertiesofsemiconductorsmustbepredictableandstable,soincludingthepurityofthedopantsandthesemiconductorlatticestructureThequalitymustbestrictlyrequired.Commonqualityproblemsincludinglatticedislocation,twinsorstackingfaultswillaffectthepropertiesofsemiconductormaterials.Forasemiconductordevice,thedefectofthemateriallattice(crystaldefect)isusuallythemaincausethataffectstheperformanceofthedevice.
Currently,themostcommonmethodusedtogrowhigh-puritysinglecrystalsemiconductormaterialsiscalledtheTchaikovskymethod(acommonmethodinsteelplants).Thisprocessputsasinglecrystalseed(seed)inadissolvedliquidofthesamematerial,andthenslowlypullsitupinarotatingmanner.Whentheseedcrystalispulledup,thesolutewillsolidifyalongtheinterfacebetweenthesolidandtheliquid,andtherotationwillmakethetemperatureofthesoluteeven.
Application
Theinventionofthesemiconductorchipisapioneeringworkinthetwentiethcentury.Itcreatedaprecedentintheinformationage.
Everyoneknowsthat"Internet"and"computer"arethemostpopulartermstoday.Computershavebecomeanindispensabletoolinourdailylives,somayIask,"WhatchipdoesyourcomputerCPUuse?"Isit"Intel"or"AMD"?Infact,whetheritis"Intel"or"AMD",theyareessentiallythesameandbelongtosemiconductorchips.
Development
Thegrowthrateoftheglobalsemiconductormanufacturingindustryin2010willreach88%
SEMI’slatestversionoftheglobalintegratedcircuitmanufacturingplantforecastreportrevealsthatsemiconductorplantsin2010Theannualexpenditureisexpectedtorisetomorethan30billionU.S.dollars,ayear-on-yearincreaseof88%comparedto2009.Manyfoundriesandmemorycompanieshaveannouncedplanstoincreasecapitalexpendituresinthepastfewmonths.Inaddition,somepreviously"frozen"projectswillalsobeunfrozen,suchasTI'sRFAB,TSMC12plant5andUMC12Aplant3/4(formerly12Bplant),Samsung's16thproductionlineandIM'sflashmemoryplantinSingapore.SEMI'sglobalintegratedcircuitmanufacturingplantobservationreportalsorevealedplansforanumberofnewchipmanufacturingplantsthatareabouttobreakground,suchasthefourthphaseoftheTSMC14plant,thepossiblestartofthe5thplantofFlashAlliance,andothers.
Ofcourse,eveniftheexpenditurein2010hasshownasubstantialincrease,theexpenditureoftheformerfabfactorystillneedstoincreasebyatleast49%in2011tobringtheequipmentexpenditurebacktothelevelof2007.Inaddition,theequipmentexpenditureplanalsodependsonthecontinuedrecoveryoftheglobaleconomy.TheSEMIGlobalIntegratedCircuitManufacturingPlantObservationReport(SEMIWorldFabForecast)predictsthattheexpenditureofDaofabbefore2011willbeslightlylowerthanthatof2007,reaching42.3billionUSdollars.
Theglobalsemiconductormarketgrewweakin2011
In2011,theglobalsemiconductormarketwasworthUS$300.94billion,onlyaslightincreaseof0.88%.Themainreasonistheglobaleconomyafterthefinancialcrisis.Therecoverylacksmomentum,theU.S.economycontinuestoslump,theEuropeandebtcrisisisworseningandthereisalackofunifiedandeffectiverescuemethods,andinflationinemergingmarketcountrieshasgenerallyincreased.Theeconomicdownturnandthesuppressionofinflationhavedirectlyledtotheweakeningofitsdemandforelectroniccompletemachines.Inaddition,themarketeffectofsemiconductormanufacturers'investmenttoexpandproductioncapacityduringthefinancialcrisiswasalsoconcentratedin2012.Theslowdowninmarketdemandandexcessmanufacturingcapacitydirectlyledtoasharpdropinproductprices,withDRAMproductpricesfallingthemost.